METHOD FOR MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to decrease stress in a gate electrode including dichloro silane(DCS)-WSi, by heavily doping phosphorous ions to the upper portion of doped polysilicon and by controlling consumption of the doped polysilicon. CONSTITUTION: A gate oxide layer(22) and the doped polysilicon(23) are sequentially formed on a semiconductor substrate(21). A tungsten-rich layer(24) is formed on the doped polysilicon. Phosphorous ions are doped into an interface between the doped polysilicon and the tungsten-rich layer. A heat treatment process is performed regarding the resultant structure.