| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and its fabricating method, in which a higher output current can be obtained without increasing the occupation area of an MOS transistor. SOLUTION: MOS transistors M11 and M12 are isolated electrically by a trench isolation oxide film 21 wherein the MOS transistor M11 is provided, at a boundary to the active region AR1 of a trench isolation oxide film 22, with a groove GP having a dimension of 20-80 nm at the inlet of opening and a depth of 50-150 nm and surrounding the active region AR1. A gate electrode 31A is formed above the active region AR1 and buried in the groove GP through a gate oxide film 30. Similarly, the MOS transistor M12 is provided, at a boundary to the active region AR2 of the trench isolation oxide film 21, with a groove GP surrounding the active region AR2 and a gate electrode 32A is buried in the groove GP through the gate oxide film 30.
|
