| 摘要 |
A transistor includes an NPN transistor provided with an N-type emitter, a P-type base, an N-type collector, an emitter diffusion region and a collector compensation diffusion region around the base and the emitter for decreasing a saturation voltage and a parasitic PNP transistor in a region where the NPN transistor is formed, the parasitic PNP transistor operating under saturation of the NPN transistor.
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