发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 PURPOSE: A thin film transistor substrate and a method of fabricating the substrate are provided in which a color filter is directly formed on the thin film transistor substrate to improve aperture rate and the color filter is formed using electro-deposition to reduce the number of masks used for fabricating the thin film transistor. CONSTITUTION: A thin film transistor substrate includes an insulating substrate, a plurality of gate lines(21) formed on the insulating substrate, and a plurality of data lines(61) intersecting the gate lines to define a plurality of pixel regions. The substrate further has a plurality of thin film transistors formed at the pixel regions and electrically connected to the data lines, a passivation film formed on the substrate, exposing the drain electrode of each thin film transistor, and polarizing plates(91,92,93) for electro-deposition placed in the pixel regions, exposing the drain electrode. The substrate also has a light-shielding layer(100) having an opening exposing the inner regions of the polarizing plates and a contact hole exposing the drain electrode, the first to third color filters(121,122,123) formed on the exposed region of the polarizing plate, and a plurality of pixel electrodes each of which is formed at each pixel region.
申请公布号 KR20020007037(A) 申请公布日期 2002.01.26
申请号 KR20000040708 申请日期 2000.07.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NOH, SU GWI
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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