发明名称 MAGNETORESISTANCE EFFECT THIN FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide a MR(magnetoresistance effect) thin film magnetic head provided with, for example a TMR(tunnel magnetoresistive) element or a CPP- GMR (current perpendicular to the plane-giant magnetoresistive) element, and has greatly improved frequency characteristic. SOLUTION: This magnetic head is provided with lower and upper shielding layers, an MR laminate which is formed between the lower and upper shielding layers to be electrically conductive to the layers an in which, a current flows perpendicularly to a laminate plane, and an insulating gap layer made of an insulating material between the lower and upper shielding layers. At least a part of the insulating gap layer is made of an insulating material having a dielectric constant lower than that of Al2O3.
申请公布号 JP2002025017(A) 申请公布日期 2002.01.25
申请号 JP20000208401 申请日期 2000.07.10
申请人 TDK CORP 发明人 SHIMAZAWA KOJI
分类号 G11B5/31;G11B5/39;H01L43/08;(IPC1-7):G11B5/39 主分类号 G11B5/31
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