发明名称 |
Lithographic exposure and structuring process comprises applying anti-refection layer made up of several layers on substrate, and applying material layer to be treated |
摘要 |
Lithographic exposure and structuring comprises preparing a substrate (1); applying an anti-refection layer (4) made up of several layers on the substrate; applying a material layer (2) to be treated on the anti-reflection layer; applying a photoresist layer (3) directly to the material layer; and exposing and structuring the photoresist layer so that the material layer is exposed in pre-determined sections for local selective treatment. An Independent claim is also included for the production of a metallic conducting pathway comprising forming a structured photoresist layer as above; removing the material layer in the exposed sections; optionally carrying out the previous two steps; depositing metallic conducting pathway material in the etched recess; and optionally back-polishing the metallic material. Preferred Features: The anti-refection layer is a SiON layer and the material layer is a SiO2 or nitride layer.
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申请公布号 |
DE10032282(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
DE20001032282 |
申请日期 |
2000.07.03 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BAUCH, LOTHAR;LEHR, MATTHIAS;LEIBERG, WOLFGANG;SPINLER, STEFAN |
分类号 |
G03F7/09;H01L21/311;H01L21/768;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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