Gate structure and method for manufacture thereof

摘要

A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer and the HfO2 layer are patterned into the gate structure. By utilizing an HfO2 layer as a gate dielectric, an effective K of the gate dielectric can be controlled to within 18 to 25. In addition, by employing a CVD method for forming the HfO2 layer, it is possible to obtain a high K gate dielectric with excellent leakage current characteristic as well as a low interface state with both a gate electrode and a semiconductor substrate.