| 摘要 |
In a fabrication of a thin film transistor, an amorphous silicon film 4 is formed on a substrate 1 and, then, phosphor 6 is deposited or diffused on or into a surface of the amorphous silicon film 4 by exposing the amorphous silicon film to phosphine plasma 5. Thereafter, a metal film 7 for source and drain electrodes is formed by sputtering. Phosphor 6 diffuses to a surface layer of the amorphous silicon film 4 during this sputtering and an n-type amorphous silicon film 8 as an ohmic contact layer is formed automatically.
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