发明名称 Method of fabricating a nickel etching mask
摘要 <p>There is provided a metal etching mask fabrication method. Chrome is first sputtered on a silica layer and a photoresist is deposited to be thick on the chrome layer. The photoresist layer is patterned, first nickel is sputtered on the photoresist pattern layer, and a second nickel layer is formed on the first nickel layer by plating. The photoresist pattern layer and the first nickel layer formed on the photoresist pattern layer are removed using acetone, and the chrome layer is removed by dry etching in plasma using a gas. &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP1174763(A2) 申请公布日期 2002.01.23
申请号 EP20010116405 申请日期 2001.07.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, SUN-TAE;CHOI, DUK-YONG;LEE, JOO-HOON
分类号 G02B6/13;G02B6/12;G02B6/136;H01L21/033;(IPC1-7):G03F1/08;H01L21/027 主分类号 G02B6/13
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