发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method superior in mass production and capable of inexpensively manufacturing a highly precise, small-sized and thin type semiconductor device in the semiconductor device of a leadless surface mounting type. SOLUTION: In the manufacturing method of the semiconductor device, a resist pattern layer performing prescribed patterning is formed on one face side having conduction of a board, a conductive metal is electrodeposited exceeding the thickness of a resist pattern on an exposure face except for the resist pattern layer, after a semiconductor element mounting metal layer 2a and one or more electrode layers 2b making projection parts on the peripheral edges of the upper ends are independently juxtaposed and formed, the resist pattern layer is removed, a semiconductor element S is mounted on the metal layer 2a, and an electrode L on the semiconductor and the electrode layer 2b are electrically connected. After the mounting part of the semiconductor element S is sealed with a resin layer 4, the board is removed, and a resin sealant in which each rear face of the metal layer 2a and the electrode layer 2b is exposed is obtained.
申请公布号 JP2002009196(A) 申请公布日期 2002.01.11
申请号 JP20000185426 申请日期 2000.06.20
申请人 KYUSHU HITACHI MAXELL LTD;TOREX SEMICONDUCTOR LTD 发明人 NAKAGAWA HIROSHI;TOMINAGA YASUHARU;NUMATA NORIYUKI;KIMURA HIROSHI
分类号 H01L23/12;H01L21/56;(IPC1-7):H01L23/12 主分类号 H01L23/12
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