| 摘要 |
PURPOSE: A method for forming a plug is provided to reduce the exhaust quantity of a pollutant material by 99 percent as compared with a conventional technology, by etching back a tungsten layer to form a tungsten plug while using C5F8 gas the global warming index of which is lower than that of perfluoro compounds(PFC) gas. CONSTITUTION: An interlayer dielectric(12) having a plug contact hole is formed on a substrate(11). A conductive layer is formed on the interlayer dielectric including the plug contact hole. The conductive layer is etched back by gas having a global warming index lower than that of the PFC gas.
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