METHOD FOR FORMING WORDLINE SPACER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a wordline spacer of a semiconductor device is provided to simplify and stabilize a manufacturing process, by forming spacers having the same structure and different thicknesses at one time. CONSTITUTION: After a wordline(1) is formed on a semiconductor substrate, a thin insulation layer(6) is evaporated on the resultant structure. A nitride layer(7) is evaporated on the resultant structure by a plasma enhanced chemical vapor deposition(PECVD) method. The nitride layer and the insulation layer are etched by an anisotropic etch process to simultaneously form the spacers in a cell region and a peripheral circuit region.