| 摘要 |
PURPOSE: A method for forming a dual gate electrode is provided to prevent penetration of p-type impurity into a semiconductor substrate or impurity depletion of the gate electrode when, to form a PMOS region, the p-type impurity is implanted into a polysilicon layer deposited on a gate insulating layer. CONSTITUTION: The gate insulating layer(20) is formed on the semiconductor substrate(10). Then, at the same time that the polysilicon layer(30',30") is deposited on the gate insulating layer(20), germanium is implanted into the polysilicon layer(30',30"). Next, n-type impurity is implanted into an NMOS region(30") of the germanium-implanted polysilicon layer, whereas the p-type impurity is implanted into the PMOS region(30'). Thereafter, a resultant structure is subjected to heat treatment process.
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