METHOD FOR FABRICATING GATE CONDUCTION LAYER PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a gate conduction layer pattern of a semiconductor device is provided to effectively eliminate fluorine inside tungsten silicide constituting a gate electrode by performing a heat treatment process on tungsten polycide in a hydrogen atmosphere. CONSTITUTION: A gate oxide layer(1) and a polysilicon layer(2) are sequentially formed on a semiconductor substrate(4). A tungsten silicide layer(3) is formed on the polysilicon layer by using gas including WF6. The tungsten silicide layer and the polysilicon layer are selectively etched to form a gate electrode pattern. The fluorine ions inside the gate electrode pattern are eliminated by performing a heat treatment process in a hydrogen atmosphere inside a vacuum tube.