| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a field oxide layer from being lost by forming an impurity region of a lightly-doped-drain(LDD) structure without a spacer formation process and forming a polymer spacer without an etch process. CONSTITUTION: A gate insulation layer(23) and polysilicon are formed on a semiconductor substrate(21). A photoresist layer pattern for a gate electrode(26) is formed on the polysilicon. The polysilicon is etched to form the gate electrode by using the photoresist layer pattern as a mask while a polymer spacer is formed on the sidewall of the photoresist layer pattern and the gate electrode. A high density impurity ion implantation process is performed by using the photoresist layer pattern and the polymer spacer as a mask to form the first impurity diffusion layer in the semiconductor substrate under the polymer spacer. The photoresist layer pattern and the polymer spacer are eliminated. A low density impurity ion implantation process is performed by using the gate electrode as a mask to form the second impurity diffusion layer connected to the first impurity diffusion layer.
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