TRANSISTOR OF ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A transistor of an electrostatic discharge(ESD) protection circuit is provided to reduce the number of manufacturing processes by using a local epitaxial layer growth process so that the height of a drain region is increased, and to improve an ESD characteristic by guaranteeing drain resistance required in the ESD protection circuit and by preventing heat radiation generated by the increased area of the drain region. CONSTITUTION: A buried oxide layer(33) having an electrode contact hole and the first epitaxial layer are sequentially stacked on a silicon substrate(32) to form a silicon-on-insulator(SOI) substrate. A source region(40) is formed in the first epitaxial layer. The second epitaxial layer is grown on the electrode contact hole and the first epitaxial layer adjacent to the electrode contact hole to form a channel region. A gate electrode(45) is formed by interposing a gate insulation layer on the first epitaxial layer at both sides of the channel region. The drain region(43) is formed on the channel region and the gate electrode.