| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photomask in which the degree of improvement of the line degeneracy of a pattern for exposure or the amount of the line degeneracy can be graphed for every wafer and to provide a method for evaluating the photomask and a semiconductor wafer. SOLUTION: The photomask 11 includes, in a prescribed region, a mask pattern evaluating pattern 13 as well as a mask pattern 12 which takes part in the formation of an element on a semiconductor wafer. At least an auxiliary pattern which corrects line degeneracy by influence in exposure has been added to the mask pattern 12 and the pattern 12 acts effectively in fine element forming pattern resolution. A first monitor region MNTR1 to which at least an auxiliary pattern which corrects line degeneracy has been added is disposed in a part of the evaluating pattern 13, and preferably a second monitor region MNTR2 with no auxiliary pattern is further disposed in another part of the pattern 13.</p> |
