| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1x1020 atoms/cm3. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
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