Semiconductor memory has select drive circuit which selectively drives dummy word line transistor, while operating in test mode

摘要

A decision circuit determines whether a selected normal word line (WL) should be substituted with a spare word line in a memory cell array, based on which a select drive circuit selectively drives the corresponding normal word line or spare word line transistors (T). The select drive circuit selectively drives the dummy word line transistors (1a,1b) during test mode or end-page read refresh mode.