MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve a TFT that can be operated speedily by manufacturing a crystalline semiconductor film where the position and size of a crystal particle are controlled, and, furthermore, using the crystalline semiconductor film for the channel formation region of the TFT. SOLUTION: A laser beam is emitted via a mask that allows laser light intensity to be modulated in desired space distribution and is made of a material that does not directly absorb the laser beam. The intensity distribution of the laser beam is reflected for forming temperature distribution inside a semiconductor device. By using the temperature distribution, the occurrence location and direction of lateral growth are controlled, and the large diameter of the crystal particle is manufactured at an arbitrary position on a substrate.