| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for forming a thin ferroelectric film suitable for an infrared sensing element with high sensitivity and provide a method for forming a thin film using the apparatus. SOLUTION: The device 1000 for forming the thin film comprises a vacuum vessel 10, a target holding block 12 held in the vacuum vessel as to be movable, a target 20 including a film forming material, an ArF excimer laser 30 for irradiating a high-energy radiation on the surface of the target 20, an optical system for condensing the radiation from the excimer laser to the surface of the target 20, a substrate holding block 50 for holding a substrate 40, an oxidizing gas introduction part 60 for introducing oxidizing gas into the vacuum vessel 10 for oxidizing substances accumulated on the substrate 40, a heater 70 for heating the substrate in the vacuum vessel 10 provided in the substrate holding block, and a light 80 for irradiating a light beam to the substrate 40 held by the substrate holding block 50.
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