发明名称 |
METHOD FOR LOCALLY MODIFYING ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CRYSTALLINE MATERIALS AND DEVICES MADE FROM SUCH MATERIALS |
摘要 |
An electronic or optoelectronic device fabricated from a crystalline materia l in which a parameter of a bandgap characteristic of said crystalline materia l has been modified locally by introducing distortions on an atomic scale in t he lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification o f said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocati on loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers. |
申请公布号 |
CA2411331(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
CA20012411331 |
申请日期 |
2001.06.07 |
申请人 |
UNIVERSITY OF SURREY |
发明人 |
GWILLIAM, RUSSELL MARK;SHAO, GUOSHENG;HOMEWOOD, KEVIN PETER |
分类号 |
H01L33/00;H01L33/02;H01L33/34;H01S5/20;(IPC1-7):H01L33/00;H01S5/30 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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