Solid state imaging device and method of manufacturing the same

摘要

The vertical charge transfer paths (205) have portions (regions A) whose both sides are defined by the device isolation regions (202) and portions (regions B) whose one side is defined by the device isolation regions 202. The impurity concentration of the device isolation regions (202a) defining both sides is set lower than that of the device isolation regions (202b) defining only one side such that a narrow channel effect in the portions of the vertical charge transfer paths (205), whose both sides are defined, can be reduced.