| 摘要 |
A non-volatile semiconductor memory device is provided, this device having an electrically rewritable first non-volatile semiconductor memory matrix array and a second such non-volatile semiconductor memory matrix array that has exactly the same construction as and that uses a memory cell of the same construction as that used in the first non-volatile semiconductor memory matrix array, this memory device being capable of execution of selection of at least one of two conditions, one being a writing priority mode condition, in which by erasing data of one of the memory matrix arrays while simultaneously writing data into the other memory matrix array, and the other being a readout priority mode condition, in which an input data inverting circuit is provided for the purpose of programming data into the second memory matrix array that is the inverted data of the first memory matrix array, and in which a differential sense amplifier circuit is provided for the purpose of reading out data of the first and second memory matrix arrays.
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