| 摘要 |
PROBLEM TO BE SOLVED: To lower the falling gradient of RF power at the lateral side of an inner wall of a treatment chamber in an HPD-DVD system, to uniformize film thickness of the substrate surface to suppress occurrence of partially concentrated doping of a F radical, and to prevent surface roughing on the inner wall. SOLUTION: The HPD-CVD system, where treatment is performed by producing a plasma state in a vacuum chamber (10) by applying RF power, has: a top antenna coil 11 formed into flat shape on the upper part of the outer wall of a cylindrical treatment chamber made of ceramics, for film deposition; and a cylindrical side antenna coil 2 additionally provided to the lateral side of the outer wall of the cylindrical treatment chamber. Further, the shape of the RF inlet part of the above side antenna coil 12 is formed into a slope shape so that partial film-thickness nonuniformity within the substrate surface, occurring on the inner wall of the chamber during film deposition on the substrate, can be suppressed. |
