发明名称 |
Manufacturing method of semiconductor substrate |
摘要 |
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.
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申请公布号 |
US2001049182(A1) |
申请公布日期 |
2001.12.06 |
申请号 |
US20010870705 |
申请日期 |
2001.06.01 |
申请人 |
URAKAMI YASUSHI;YAMAUCHI SHOICHI;SAKAKIBARA TOSHIO;YAMAGUCHI HITOSHI;TSUJI NOBUHIRO |
发明人 |
URAKAMI YASUSHI;YAMAUCHI SHOICHI;SAKAKIBARA TOSHIO;YAMAGUCHI HITOSHI;TSUJI NOBUHIRO |
分类号 |
H01L21/306;H01L21/761;H01L21/763;(IPC1-7):H01L21/20;C30B1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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