发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH FERROELECTRIC MEMORY AND REWRITE CONTROL METHOD FOR THE FERROELECTRIC MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device to enable setting of a ROM area and a RAM area by a user of an FRAM to be combined with a CPU and to enable setting and changing of the setting in a data writing operation. SOLUTION: In a microcomputer system having the CPU, a ferroelectric memory and an I/O unit, the ferroelectric memory is constituted, so that discrimination bits to decide whether a prescribed data string is made to be rewritable by each prescribed data string to data to be written and an area where data rewrite is prohibited is set in the ferroelectric memory by the discrimination bits.</p>
申请公布号 JP2001331371(A) 申请公布日期 2001.11.30
申请号 JP20000147680 申请日期 2000.05.19
申请人 TOSHIBA CORP 发明人 YAMAGUCHI TAKASHI
分类号 G06F12/14;G06F21/02;G11C11/22;G11C14/00;(IPC1-7):G06F12/14 主分类号 G06F12/14
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