| 发明名称 |
Heterojunction bipolar transistor and manufacturing method therefor |
| 摘要 |
A Pt alloyed reaction layer is formed under a base ohmic electrode. This alloyed reaction layer extends through a base protective layer so as to reach a base layer. Besides, a Pt alloyed reaction layer is formed under an emitter ohmic electrode. This alloyed reaction layer is formed only within a second emitter contact layer. With this constitution, the manufacturing cost for the HBT can be reduced and successful contact characteristics for the HBT can be obtained.
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| 申请公布号 |
US2001046747(A1) |
申请公布日期 |
2001.11.29 |
| 申请号 |
US20010775593 |
申请日期 |
2001.02.05 |
| 申请人 |
SHINOZAKI TOSHIYUKI;TSUKAO TOSHIYA |
发明人 |
SHINOZAKI TOSHIYUKI;TSUKAO TOSHIYA |
| 分类号 |
H01L21/28;H01L21/331;H01L29/205;H01L29/417;H01L29/45;H01L29/73;H01L29/737;(IPC1-7):H01L31/032;H01L31/072;H01L31/033;H01L31/109;H01L21/822 |
主分类号 |
H01L21/28 |
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