| 摘要 |
The micro-machined surface structure includes a substrate 1, a circuit 10 comprising an n-layer or a p-layer diffused after ion implantation of impurities onto the substrate, an oxide film 5 for protecting the circuit 10 and a nitride film 6 formed on the oxide film. A circuit connection portion 11 is electrically connected with the circuit 10 and a structural body comprising polysilicon is formed on the circuit connection portion 11 and on the nitride film 6 in which the nitride film is formed between the oxide film 5 and the circuit connection portion 11 on the substrate.
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