发明名称 GRINDING METHOD FOR SEMICONDUCTOR WAFER AND ITS DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a grinding method for a semiconductor wafer and its device for preventing the outer peripheral die wear of a wafer and improving degree of flatness thereon. SOLUTION: A silicon wafer W is pressed on an grinding surface of an abrasive cloth 11 and a grinding surface plate 12 is rotated to grind the wafer surface. During grinding, the outer peripheral part of the wafer is not supported on the back face thereof by a back pad 15. As a result, a pressing force to the grinding surface plate 12 in the outer peripheral part of the wafer becomes weaker than that in the center part thereof and a contact area on the grinding surface per unit time is reduced. A template thickness is roughly aligned height of the end face on the abrasive side with that of the grinding surface of the wafer W, thereby a rebound amount of the abrasive cloth 11 at grinding is reduced and pressure in the outer peripheral part per unit area is less than that in the center part thereof, resulting in reduction of the outer peripheral die wear of the wafer W, enhancing the flatness on the wafer surface.</p>
申请公布号 JP2001328062(A) 申请公布日期 2001.11.27
申请号 JP20000150007 申请日期 2000.05.22
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 KOMATSU KEI;ONO YOSHIMICHI
分类号 B24B37/00;(IPC1-7):B24B37/00 主分类号 B24B37/00
代理机构 代理人
主权项
地址