| 摘要 |
A thin film transistor design is described which is not subject to either dark or photo current leakage. The process to manufacture this device begins with the formation of a gate electrode on a transparent substrate followed by its over coating with layers of gate insulation, undoped amorphous silicon, doped amorphous silicon, and a second layer of chromium. The chromium and amorphous silicon layers are then patterned and etched to form a channel pedestal. In a key feature of the invention the vertical side walls of this pedestal are then given a protective coating of oxide or nitride, forming spacers. This is then followed by the deposition of second level metal which is etched to form source and drain electrodes with a suitable gap between them.
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