Method of fabricating integrated circuits

摘要

A method of fabricating integrated circuits. An oxide layer and a patterned dummy gate layer are formed on a substrate. The patterned dummy gate layer is used as an implantation mask in a first ion implantation step to form a source/drain in the substrate. After performing a step to reduce the width of the patterned dummy gate layer, the narrower patterned dummy gate layer is used as an implantation mask in a second ion implantation step to form a source/drain extension in the substrate. A planarized dielectric layer is formed over the substrate; after which the dummy gate layer and the underlying oxide layer are removed to form an opening inside the dielectric layer. A gate dielectric layer and a metal gate are formed inside the opening.