发明名称 COMPOSITION FOR FILM FORMATION AND MATERIAL FOR INSULATION FILM FORMATION
摘要 PROBLEM TO BE SOLVED: To provide a composition for insulation film formation which is excellent in storage stability and can form a cured film excellent in heat resistance, electrical insulation properties (with a relative permittivity of 3 or lower), and crack resistance. SOLUTION: This composition contains (A) a polyamic acid and/or polyimide prepared by reacting a tetracarboxylic dianhydride with an amine compound containing a polyamine having at least three amino groups and (B) a hydrolyzate and/or condensate of at least one silane compound selected from the group consisting of (B-1) compounds represented by the formula: R1aSi(OR2)4-a and (B-2) compounds represented by the formula: R3b(R4O)3-bSi-(R7)d-Si-(OR5)3-cR6c.
申请公布号 JP2001316621(A) 申请公布日期 2001.11.16
申请号 JP20000138309 申请日期 2000.05.11
申请人 JSR CORP 发明人 OKADA TAKASHI;MATSUBARA MINORU;GOTO KOHEI
分类号 C08J5/18;C08G73/10;C08G77/08;C08L79/08;C08L83/04;C08L83/14;C09D179/08;C09D183/02;C09D183/04;C09D183/14;H01L21/312;H01L21/316;(IPC1-7):C09D179/08 主分类号 C08J5/18
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