发明名称 |
COMPOSITION FOR FILM FORMATION AND MATERIAL FOR INSULATION FILM FORMATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for insulation film formation which is excellent in storage stability and can form a cured film excellent in heat resistance, electrical insulation properties (with a relative permittivity of 3 or lower), and crack resistance. SOLUTION: This composition contains (A) a polyamic acid and/or polyimide prepared by reacting a tetracarboxylic dianhydride with an amine compound containing a polyamine having at least three amino groups and (B) a hydrolyzate and/or condensate of at least one silane compound selected from the group consisting of (B-1) compounds represented by the formula: R1aSi(OR2)4-a and (B-2) compounds represented by the formula: R3b(R4O)3-bSi-(R7)d-Si-(OR5)3-cR6c.
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申请公布号 |
JP2001316621(A) |
申请公布日期 |
2001.11.16 |
申请号 |
JP20000138309 |
申请日期 |
2000.05.11 |
申请人 |
JSR CORP |
发明人 |
OKADA TAKASHI;MATSUBARA MINORU;GOTO KOHEI |
分类号 |
C08J5/18;C08G73/10;C08G77/08;C08L79/08;C08L83/04;C08L83/14;C09D179/08;C09D183/02;C09D183/04;C09D183/14;H01L21/312;H01L21/316;(IPC1-7):C09D179/08 |
主分类号 |
C08J5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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