发明名称 |
Method of manufacturing gate insulated field effect transistors |
摘要 |
A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
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申请公布号 |
US2001041396(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010877059 |
申请日期 |
2001.06.11 |
申请人 |
YAMAZAKI SHUNPEI;ZHANG HONGYONG;INUSHIMA TAKASHI;FUKADA TAKESHI |
发明人 |
YAMAZAKI SHUNPEI;ZHANG HONGYONG;INUSHIMA TAKASHI;FUKADA TAKESHI |
分类号 |
C23C14/56;H01L21/20;H01L21/203;H01L21/336;(IPC1-7):H01L21/00 |
主分类号 |
C23C14/56 |
代理机构 |
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