发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
An objective of the present invention is to realize a comparator which uses MOS transistors and has a reduced offset voltage and occupies a small surface area. This is characterized in that an impurity is introduced into a channel region of a MOS transistor, the mobility of a load side MOS transistor is made smaller than the mobility of a differential side MOS transistor, and the mutual conductance of the load side MOS transistor is made smaller than the mutual conductance of the differential side MOS transistor.
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申请公布号 |
US2001040259(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20000548123 |
申请日期 |
2000.04.12 |
申请人 |
SHIIKI MIKA;KITAMURA KENJI |
发明人 |
SHIIKI MIKA;KITAMURA KENJI |
分类号 |
H01L21/8234;G01R19/165;G01R31/28;H01L21/8238;H01L27/088;H03F3/45;(IPC1-7):H01L29/76;H01L31/062 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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