| 发明名称 |
Semi-physical modeling of hemt dc-to-high frequency electrothermal characteristics |
| 摘要 |
A method for modeling semiconductors which utilizes a semiphysical device model (figure 45) coupled with an analytical thermal resistance model to self consistently solve for the channel temperature and internal charge/electric field structure of the semiconductor device. |
| 申请公布号 |
AU6295101(A) |
申请公布日期 |
2001.11.12 |
| 申请号 |
AU20010062951 |
申请日期 |
2001.04.25 |
| 申请人 |
TRW INC. |
发明人 |
ROGER S. TSAI |
| 分类号 |
G01R31/28;G01R31/316;G06F17/50;H01L21/338;H01L29/00;H01L29/778;H01L29/80;H01L29/812 |
主分类号 |
G01R31/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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