发明名称 Power switching circuit with reduced interference radiation
摘要 A power switching circuit with reduced interference radiation includes at least one pair of low-side and high-side MOS power transistors, between which a load resistor is connected. One or at least one of the low-side MOS power transistors is connected to a drive circuit having a divider for dividing a difference between a maximum output voltage of the MOS power transistor and an instantaneous output voltage at the load resistor as a dividend, by a maximum output voltage of the MOS power transistor as a divisor, and a level converter for generating a drive voltage for the MOS power transistor. The drive voltage is proportional to the quotient.
申请公布号 US6313689(B1) 申请公布日期 2001.11.06
申请号 US19990373523 申请日期 1999.08.12
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HORCHLER WOLFGANG
分类号 H03K17/16;(IPC1-7):H03K17/16;H03K17/30 主分类号 H03K17/16
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