FLASH MEMORY AND METHOD FOR MANUFACTURING THEREOF USING SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A flash memory and a method for manufacturing the same are provided to simplify the manufacturing process and to reduce a driving voltage by using a selective epitaxial growth. CONSTITUTION: A first oxide layer(3) is formed on a semiconductor substrate(1) and selective etched the first oxide layer(3) on an active region defined by a selective growth window(2), thereby exposing the substrate(1). A first gate(4) is formed with a single crystalline silicon by selective epitaxial growth. After forming a second oxide layer(6) on the first gate(4), a polysilicon layer is formed on the resultant structure. A second gate(7) is formed by etching the polysilicon layer. A window protection layer(5) is formed on the selective growth window(2) and spacers(8) are formed at both sidewalls of the first gate(4), the second oxide layer and the second gate(7).