| 摘要 |
PURPOSE: An X-ray detector and a method for fabricating the same are provided to simplify a fabricating process by changing a structure of a gate and a data pad part. CONSTITUTION: A gate electrode(76) and a gate pad(72) are formed by depositing and patterning the first metal on a substrate(1). An active layer(102) and a gate insulating layer(100) are formed by depositing and patterning the first insulating layer and a semiconductor layer on the gate electrode(76) and the gate pad(72). The first capacitor electrode(90) and a drain auxiliary electrode(91) are formed by depositing and patterning the first transparent electrode thereon. A source electrode(86), a drain electrode(88), a data line(80), and a data pad(82) are formed by depositing and patterning the second metal on the whole surface of the first transparent electrode and the substrate(1). The data line(80) and the data pad(82) are formed with one body. A grounding line(96) is formed on the first capacitor electrode(90) by using the second metal. The second capacitor electrode(92) and a dielectric layer(106) are formed by forming and patterning the second insulating layer and the second transparent electrode on the second metal. A protective layer(108) is formed by depositing and patterning the third insulating layer on the second capacitor electrode(92) and the substrate(1). A data and a gate pad contact hole(110,118) and a drain and a capacitor contact hole(112,114) are formed in the protective layer(108). A pixel electrode(94) and a gate pad and a data pad electrode(74,84) are formed by depositing and patterning the third transparent electrode on the protective layer(108).
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