| 摘要 |
PURPOSE: To improve the ratio of a sheet resistance value in a low-concentration dope area or non-dope area to a sheet resistance value in a high-concentration dope area concerning the high-concentration dope area and the low-concentration dope area or non-dope area formed in one silicon film. CONSTITUTION: A polysilicon film 13 patterned through a layer insulating film 12 is formed on a silicon substrate 11. This polysilicon film 13 has high- concentration dope areas 13a and 13b of high sheet resistance and a low- concentration dope area 13b of low sheet resistance. The entire polysilicon film 13 is covered with an SiO2 film 14. The entire SiO2 film 14 is covered with an SiNx film 15 formed by low-pressure CVD using raw gases containing hydrogen. The polysilicon film 13 is hydrogenated by hydrogen in the raw gases to be used for forming the SiNx film 15. As a result, the sheet resistance values in the high-concentration dope areas 13a and 13c are not almost increased but the sheet resistance value in the low-concentration dope area 13b is increased.
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