| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a new MnBi thin film, by which the fine structure and crystallinity can be controlled and the MnBi thin film used as a perpendicular magnetic recording material in place of TbFeCo can be obtained, and to provide the new MnBi thin film. SOLUTION: After laminating Mn and Bi layers on a substrate, the laminated layers are heated to 250 to 350 deg.C to form a MnBi seed layer. Then, the MnBi seed layer is heated to 250 to 350 deg.C and at the same time, Mn and Bi elements are simultaneously supplied as molecular beams (atomic beams) onto the MnBi seed layer, thereby the Mn and Bi elements grow epitaxially and the MnBi thin film oriented in the C-axis can be obtained.
|
