| 摘要 |
A high-voltage lateral double-diffused metal oxide semiconductor has a field metal plate or an electrical field shield conductive layer, which is electrically coupled with a gate or a gate conductive layer that lies over a field oxide layer. A wire bridges over the field oxide layer and thus decreases the strength of the electrical field. The field oxide layer under the crossing wire has no drift region below. Therefore, the electrical field crowding effect does not occur at the junction between the drift region and the channel. In addition, there is no wire over the field oxide layer having the drift region below. Thus, the components can work normally. In this way, the strength of electrical field between the drift region and the channel decreaes and the breakdown voltage of high-voltage lateral double-diffused metal oxide semiconductor increases.
|
