发明名称 |
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor |
摘要 |
A process for preparing an silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, a wafer having interstitial oxygen atoms is first subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.
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申请公布号 |
US6306733(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US20000626635 |
申请日期 |
2000.07.27 |
申请人 |
MEMC ELECTRONIC MATERIALS, SPA |
发明人 |
FALSTER ROBERT;CORNARA MARCO;GAMBARO DANIELA;OLMO MASSIMILIANO |
分类号 |
C30B29/06;H01L21/26;H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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