| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve productivity by reducing manufacturing processes, to prevent the defect in breakdown voltage of a gate insulating film, and to improve the yield of a product in a bottom gate type TFT. SOLUTION: This bottom gate type TFT 100A is manufactured by a process (1) for forming a gate electrode 2 on a substrate 1, a process (2) for forming a gate insulating film 6 on the gate electrode 2, a process (3) for forming a laminated body in which an active layer precursor film (polysiliocn film 7) and a protecting insulating film 8 are laminated on the gate insulting film 6 so that the protecting insulating film 8 can have thickness of 100 nm or less, a process (4) for injecting dopant through the protecting insulating film 8 into an LDD area 9 or a source drain area 10 of the active layer precursor film, and a process (5) for activating the implanted dopant and for forming the dopand non-implanted part as an active layer. Also, a liquid crystal display device 200A or an organic EL device 300 are manufactured by using the TFT 100A.</p> |
