发明名称 PLASMA PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To enhance the yield by eliminating standing gas at the central part of an electrode. SOLUTION: Plate electrodes are disposed oppositely and in parallel with each other in a reaction chamber, a substrate is placed on the lower electrode and processing gas is blown to the substrate from a large number of gas supply holes 7 made in the upper electrode. While discharging gas in the reaction chamber radially and uniformly to the outside of the substrate from an annular exhaust opening secured to surround the substrate on the lower electrode, a plasma is generated between the electrodes by applying high frequency power between the opposite plate electrodes and utilized for processing the substrate placed on the lower electrode. In such a plasma processing system, the upper electrode 14 is additionally provided with a gas supply hole 17 substantially at the central position thereof with reference to the annular exhaust opening secured to surround the substrate.
申请公布号 JP2001284256(A) 申请公布日期 2001.10.12
申请号 JP20000091304 申请日期 2000.03.29
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 URANO YUJI;HARA MASAYUKI
分类号 H05H1/46;C23C16/455;C23F4/00;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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