| 摘要 |
<p>PROBLEM TO BE SOLVED: To electrically control the threshold voltage of a thin-film transistor to absorb its variation. SOLUTION: The thin-film semiconductor device comprises a thin-film transistor TFT integrated on a substrate 1 and a wiring connecting the TFTs. Each TFT has a specified threshold voltage, and comprises a channel Ch which turns on/off according to a gate voltage applied through the wiring. At least a part of the TFTs comprises a semiconductor thin-film 4 constituting the channel Ch, and first and second gate electrodes 2F and 2R provided on the front and rear surfaces of the semiconductor thin-film 4 through insulating films 3 and 7. The first and second gate electrodes 2F and 2R independently accept first and second gate voltages, respectively, through the wiring provided separately. The first gate electrode 2F on/off-controls the channel Ch according to the first gate voltage, and the second gate electrode 2R actively controls the threshold voltage according to the second gate voltage for appropriate on/off operation of the TFT.</p> |
