| 摘要 |
<p>Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path (26). An electrostatic patterning device (58) produces an electrostatic charge of a predetermined pattern and density on a backing (52). An abrasive/binding agent container (60) deposits an abrasive/binding agent mixture on the surface of the backing (52). The mixture is attracted to the backing (52) in the pattern of the electrostatic charge. A vacuum force generator (62) removes the excess abrasive/binding agent mixture from the backing (52). An UV irradiation device (64) fixes the mixture to the backing (52). A conveyor (74) carries the fixed-abrasive substrate (54) to the CMP station (66).</p> |
