Semiconducting arrangement improved to enable further increase in doping of drift path whilst preventing problems due to different thermal expansion coefficients - has rigid electrodes electrically separated by insulating arrangement contg. insulating or holding coating(s) and/or pn junction and at least one hollow vol

摘要

The semiconducting arrangement has at least two rigid electrodes (6) that are electrically separated by an insulating arrangement consisting of at least one insulating or holding coating and/or a pn junction. The insulating arrangement also contains at least one hollow vol. (7).