发明名称 QUANTUM MAGNETIC MEMORY
摘要 A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source. The storage medium has a plurality of storage locations (160), each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system (120) directs the source of spin polarized electrons to one of the plurality of storage locations.
申请公布号 WO0175894(A2) 申请公布日期 2001.10.11
申请号 WO2001US08080 申请日期 2001.03.13
申请人 INTEL CORPORATION;HANNAH, ERIC, C.;BROWN, MICHAEL, A. 发明人 HANNAH, ERIC, C.;BROWN, MICHAEL, A.
分类号 G11B5/00;G11B11/11;G11B11/115;G11C11/16;H01F10/32;(IPC1-7):G11C/ 主分类号 G11B5/00
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