Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system

摘要

The present invention provides a multilayer structure comprising: one of a first antiferromagnetic layer and a bias ferromagnetic layer; an interface control layer in contact with the one of the first antiferromagnetic layer and the bias ferromagnetic layer; a free magnetic layer in contact with the interface control layer; a non-magnetic layer in contact with the free magnetic layer; a pinned magnetic layer in contact with the non-magnetic layer; and a second ferromagnetic layer in contact with the pinned magnetic layer.